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Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.10
Figure 8. On-Resistance Variation
vs. Temperature
2.1
1.8
1.05
1.5
1.00
1.2
0.95
*Notes:
1. V GS = 0V
0.9
*Notes:
1. V GS = 10V
T J , Junction Temperature [ C ]
T J , Junction Temperature [ C ]
0.90
-100
2. I D = 10mA
-50 0 50 100 150 200
o
0.6
-100
2. I D = 75A
-50 0 50 100 150
o
200
Figure 9. Maximum Safe Operating Area
2000
1000
Figure 10. Maximum Drain Current
vs. Case Temperature
250
10us
200
100
100us
1ms
10ms
150
10
Operation in This Area
is Limited by R DS(on)
DC
100
1. T C = 25 C
2. T J = 175 C
T C , Case Temperature [ C ]
1
0.1
0.1
*Notes:
o
o
3. Single Pulse
1 10 100
V DS , Drain-Source Voltage [V]
300
50
0
25
Limited by package
50 75 100 125 150
o
175
Figure 11. Unclamped Inductive Switching Capability
100
If R = 0
STARTING T J = 25 C
STARTING T J = 150 C
t AV = (L) ( I AS ) / ( 1.3*RATED BV DSS -V DD )
If R = 0
t AV = (L/R)In [( I AS *R ) / ( 1.3*RATED BV DSS -V DD ) +1 ]
o
10
o
1
0.01
0.1
1
10
100
1000
t AV , TIME IN AVALANCHE (ms)
?2011 Fairchild Semiconductor Corporation
FDB035N10A Rev. C2
4
www.fairchildsemi.com
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